BCG008
- Description
The BeRex BCG008 is a GaN Power HEMT die with a nominal 0.15 micron gate length and 1250 micron gate width making the product ideally suited for amplifier applications where high-gain and high power from DC to 26 GHz.
The product may be used in either wide-band or narrow-band applications.
The BCG008 is produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability.
- Applications
- Commercial
- Military / Hi-Rel.
- Test & Measurement
- Device Features
- 39.0 dBm Typical Saturated Output Power (P3dB) @ 12 GHz
- 9.5 dB Typical Saturated gain (G3dB) @ 12 GHz
- 72 % PAE Typical @ 12 GHz
- 0.15 X 1250 Micron Recessed Gate
| Title | Model No. | Datasheets | |
|---|---|---|---|
|
50 ohm, Board Mounted
|
BCG008
|
Enquire |